1 AM25P03-60D analog power may, 2005 - rev. a preliminary publication order number: ds-am25p03-60_d these miniature surface mount mosfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. typical applications are pwmdc-dc converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. v ds (v) r ds(on) m( ? )i d (a) 59 @ v gs = -4.5v 24 95 @ v gs = -2.5v 19 product summary -26.5 p-channel 30-v (d-s) mosfet ?low r ds(on) provides higher efficiency and extends battery life ? miniature to-252 surface mount package saves board space ? high power and current handling capability ? extended vgs range (25) for battery pack applications notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature symbol maximum units v ds -26.5 v gs 12 continuous drain current a t a =25 o c i d 24 i dm 40 i s -30 a power dissipation a t a =25 o c p d 50 w t j , t stg -55 to 175 o c operating junction and storage temperature range continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parame te r pulsed drain current b v gate-source voltage drain-source voltage a parameter symbol maximum units maximum junction-to-ambient a r ja 50 o c/w maximum junction-to-case r jc 3.0 o c/w thermal resistance ratings
2 AM25P03-60D analog power may, 2005 - rev. a preliminary publication order number: ds-am25p03-60_d notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. analog power (apl) reserves the right to make changes without further notic e to any products herein. apl makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does apl assume any liability arising ou t of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, conseque ntial or incidental damages. ?typical? parameters which may be provided in apl data sheet s and/or specifications can a nd do vary in different appli cations and actual performance may vary over time. all operating parameters , including ?typicals? must be validated for each customer appl ication by customer?s technical experts. apl does not convey any license under its patent rights nor the rights of others. apl products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications int ended to support or sustain life, or for any other application in which the failure of the apl product could create a situation where personal inju ry or death may occur. should buyer purchase or use apl products for any such uninte nded or unauthorized application, buyer shall indemnify and hold a pl and its officers, employees, subsidiari es, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirect ly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that apl was negligent regarding the design or m anufacture of the part. apl is an equal opportunity/affirmative action employer. min typ max gate-threshold voltage v gs(th) v ds = v gs , i d = -250 ua -1 gate-body leakage i gss v ds = 0 v, v gs = 12 v 100 na v ds = -21 v, v gs = 0 v -1 v ds = -21 v, v gs = 0 v, t j = 55 o c -5 on-state drain current a i d ( on ) v ds = -5 v, v gs = -10 v -41 a v gs = -4.5 v, i d = -24 a 59 v gs = -2.5 v, i d = -19 a 95 forward tranconductance a g fs v ds = -15 v, i d = -24 a 31 s diode forward voltage v sd i s = -41 a, v gs = 0 v -0.7 v total gate charge q g 25.0 gate-source charge q gs 2.4 gate-drain charge q g d 3.9 turn-on delay time t d(on) 10 rise time t r 2.8 turn-off delay time t d(off) 53.6 fall-time t f 46 dynamic b switching drain-source on-resistance a r ds(on) m ? v dd = -15 v, r l = 15 ? , id = -24 a, vgen = -10 v, rg = 6 ? ns v ds = -15 v, v gs = -4.5 v, i d = -24 a nc specifications (t a = 25 o c unless otherwise noted) ua i dss zero gate voltage drain current static test conditions symbol parameter limits unit
3 AM25P03-60D analog power may, 2005 - rev. a preliminary publication order number: ds-am25p03-60_d typical electrical characteristics figure 5. gate charge figure 1. output characteristics fig ure 2. transfer characteristics figure 4. capacitance figure 6. on-resistance vs. junction temperature 0 5 10 15 20 01234 -v ds , drain to source voltage (v) -i d , drain current (a) v gs = -4.5v -2.5v 0 5 10 15 0.5 1 1.5 2 2.5 -v gs , gate to source voltage (v) -i d , drain current (a) t a = -55 o c 25 o c 125 o c figure 3. on-resistance vs. drain current 0.8 1 1.2 1.4 1.6 0 5 10 15 20 -i d , dirain current (a) r ds(on) , normalized drain-source on-resistance v gs = -2.5v -4.5v -10 -8 -6 -4 -2 0 0 4 8 121620 qg, charge (nc) vgs voltage ( v ) 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance v gs = -4.5 v 0 200 400 600 800 1000 1200 0 4 8 12162024 v ds - drain-to-source voltage (v) c - capacitance (pf) ciss coss crss
4 AM25P03-60D analog power may, 2005 - rev. a preliminary publication order number: ds-am25p03-60_d 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , body diode forward voltage (v) -i s , reverse drain current (a) t a = 125 o c 25 o c 0 0.03 0.06 0.09 0.12 0.15 12345 -v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) typical electrical characteristics figure 11. transient thermal response curve figure 10. single pulse maximum power dissipation figure 9. vth gate to source voltage vs temperature figure 7. source-drain diode forward voltage figure 8. on-resistance with gate to source voltage normalized thermal transien t junction to ambient 0.4 0.6 0.8 1 1.2 -50 -25 0 25 50 75 100 125 150 t a , ambient temperature ( o c) -v th , gate-source thresthold voltage (v) i d = -250 a 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 time (sec) power (w) single pulse r ja = 250c/w t a = 25c 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 square wave puls e duration (s e c) normalized effective transient thermal impedance r ja (t) = r(t) + r ja r ja = 250 c/w t j - t a = p * r ja (t) duty cy c le, d = t 1 /t p( p k t 1 t 2 single puls e 0.01 0.02 0.05 0.1 0.2 d = 0.5
5 AM25P03-60D analog power may, 2005 - rev. a preliminary publication order number: ds-am25p03-60_d package information
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